Self biased dual mode differential CMOS TIA for 400G fiber optic links

ABSTRACT

A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application claims priority to and is a continuation of U.S.application Ser. No. 14/340,388, filed on Jul. 24, 2014, which claimspriority to U.S. Provisional Application No. 61/882,576, filed on Sep.25, 2013, and are incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention relates to communication systems and integratedcircuit (IC) devices. More particularly, the present invention providesan integrated transimpedance amplifier device and method therefor.

Over the last few decades, the use of communication networks exploded.In the early days Internet, popular applications were limited to emails,bulletin board, and mostly informational and text-based web pagesurfing, and the amount of data transferred was usually relativelysmall. Today, Internet and mobile applications demand a huge amount ofbandwidth for transferring photo, video, music, and other multimediafiles. For example, a social network like Facebook processes more than500 TB of data daily. With such high demands on data and data transfer,existing data communication systems need to be improved to address theseneeds.

CMOS technology is commonly used to design communication systemsimplementing Optical Fiber Links. As CMOS technology is scaled down tomake circuits and systems run at higher speed and occupy smaller chip(die) area, the operating supply voltage is reduced for lower power.Conventional FET transistors in deep-submicron CMOS processes have verylow breakdown voltage as a result the operating supply voltage ismaintained around 1 Volt. The Photo-detectors (PD) used in 28G and 10GOptical Receivers require a bias voltage of more than 2 Volts across theanode and cathode nodes of the PD for better photo-current responsivity.These limitations provide significant challenges to the continuedimprovement of communication systems scaling and performance.

There have been many types of communication systems and methods.Unfortunately, they have been inadequate for various applications.Therefore, improved communication systems and methods are desired.

BRIEF SUMMARY OF THE INVENTION

The present invention is directed to communication systems andintegrated circuit (IC) devices. More specifically, various embodimentsof the present invention provide a fully differential self-biasedtransimpedance amplifier (TIA) device configured with deep n-wellregions.

Future 1 THz and 400 GHz Optical Fiber Links will have multiple channelswith 28G and 10G Optical Receivers (Rx) on a single silicon chipimplemented in a high-speed deep-submicron CMOS technology. As CMOStechnology is scaled down to make circuits and systems run at higherspeed and occupy smaller chip (die) area, the operating supply voltageis reduced for lower power. Conventional FET transistors indeep-submicron CMOS processes have very low breakdown voltage, as aresult the operating supply voltage is maintained around 1 Volt. ThePhoto-detectors (PD) used in 28G and 10G Optical Receivers require abias voltage of more than 2 Volts across the anode and cathode nodes ofthe PD for better photo-current responsivity.

In an embodiment, the present invention provides a transimpedanceamplifier (TIA) device or a system provided on a single integratedcircuit (IC) chip device. The device or system includes a photodiodecoupled to a differential TIA, which is followed by a LevelShifting/Differential Amplifier (LS/DA). The differential TIA includes afirst TIA and a second TIA. The first TIA can include a first inputterminal and a first output terminal. Similarly, the second TIA caninclude a second input terminal and a second output terminal. Thephotodiode is coupled between the first input terminal and the secondinput terminal. The LS/DA can be coupled to the first output terminaland the second output terminal.

In an embodiment, the present invention provides a self-biaseddifferential TIA device. The TIA device includes a semiconductorsubstrate comprising a plurality of CMOS cells. These CMOS cells can beconfigured using a 28 nm process technology. Each of the CMOS cells caninclude a deep n-type well region. The first TIA can be configured usinga plurality of first CMOS cells, while the second TIA can be configuredusing a plurality of second CMOS cells such that the second inputterminal is operable at any positive voltage level with respect to anapplied voltage to a deep n-well for each of the plurality of secondCMOS cells.

Using the deep n-well regions, the differential TIA can be self-biasedwith customizable bias voltages at the TIA inputs. Any positive voltagelevel can be used (2V, 3V, 5V, etc.) as long as there is 1V across theTIA and there is a differential voltage between the inputs of the firstand second TIA of at least 2-5V. The photodiode can be characterized bya responsivity value ranging from about 0.6 to about 0.9 Amps/Watt.

Typically, in existing high speed TIA's the PD is AC-coupled to thetrans-impedance amplifier (TIA) and/or external voltage is used to biasthe PD. AC-coupling between PD and TIA reduces the system sensitivity.Moreover, with multiple channels (over 50 channels in conventionalembodiments) the external bias circuits add to the system complexity andincreases the module cost. Embodiments of the present inventioneliminate the need of external bias circuits and all bias voltages tothe PD will be internally generated by the CMOS TIA. Additionally, thearchitecture described here AC-couples the PD to the TIA reducing noiseand improving sensitivity.

Many benefits are recognized through various embodiments of the presentinvention. Such benefits include having low inductance radio frequency(RF) return, improved receiver stability, and signal integrity. Thesebenefits can enable higher Zt designs of communications IC chip deviceswith improved RX sensitivity, or receive sensitivity. In a specificembodiment, the differential approach offers a 1.5 dB SNR improvement.Being in a differential configuration also offers common mode rejection(if such a signal is present) and can also enhance linearity asdifferential architectures allow for even order harmonic suppression.Other benefits will be recognized by those of ordinary skill in the artthat the mechanisms described can be applied to other communicationssystems as well.

A further understanding of the nature and advantages of the inventionmay be realized by reference to the latter portions of the specificationand attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more fully understand the present invention, reference ismade to the accompanying drawings. Understanding that these drawings arenot to be considered limitations in the scope of the invention thepresently described embodiments and the presently understood best modeof the invention are described with additional detail through the use ofthe accompanying drawings in which:

FIG. 1A is a simplified block diagram of a transimpedance amplifierdevice (TIA) according to an embodiment of the present invention.

FIG. 1B is a simplified diagram illustrating a deep n-well NFET deviceaccording to an embodiment of the present invention.

FIG. 2 is a simplified block diagram illustrating a transimpedanceamplifier device according to an embodiment of the present invention.

FIG. 3 is a simplified circuit diagram illustrating a fully differentialtransimpedance amplifier device according to an embodiment of thepresent invention.

FIG. 4 is a simplified circuit diagram illustrating a fully differentialAC-coupled transimpedance amplifier device according to an embodiment ofthe present invention.

FIG. 5 is a simplified table describing characteristics oftransimpedance amplifier devices according to various embodiments of thepresent invention.

FIGS. 6A and 6B are simplified graphs illustrating a simulation of a 28nm CMOS TIA according to an embodiment of the present invention.

FIGS. 6C and 6D are simplified graphs illustrating simulation of a 45 nmCMOS TIA according to an embodiment of the present invention.

FIG. 6E is a simplified graph illustrating a simulation comparing a 28nm CMOS TIA and a 45 nm CMOS TIA according to various embodiments of thepresent invention.

FIG. 7 is a simplified block diagram illustrating a power supplyregulator according to an embodiment of the present invention.

FIG. 8 is a simplified block diagram illustrating a transimpedanceamplifier device according to an embodiment of the present invention.

FIG. 9 is a simplified block diagram illustrating a transimpedanceamplifier device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to transimpedance amplifier (TIA)devices and systems configured on a single integrated circuit (IC) chipdevice. More specifically, various embodiments of the present inventionprovide a self-biased transimpedance amplifier (TIA) device.

The following description is presented to enable one of ordinary skillin the art to make and use the invention and to incorporate it in thecontext of particular applications. Various modifications, as well as avariety of uses in different applications will be readily apparent tothose skilled in the art, and the general principles defined herein maybe applied to a wide range of embodiments. Thus, the present inventionis not intended to be limited to the embodiments presented, but is to beaccorded the widest scope consistent with the principles and novelfeatures disclosed herein.

In the following detailed description, numerous specific details are setforth in order to provide a more thorough understanding of the presentinvention. However, it will be apparent to one skilled in the art thatthe present invention may be practiced without necessarily being limitedto these specific details. In other instances, well-known structures anddevices are shown in block diagram form, rather than in detail, in orderto avoid obscuring the present invention.

The reader's attention is directed to all papers and documents which arefiled concurrently with this specification and which are open to publicinspection with this specification, and the contents of all such papersand documents are incorporated herein by reference. All the featuresdisclosed in this specification, (including any accompanying claims,abstract, and drawings) may be replaced by alternative features servingthe same, equivalent or similar purpose, unless expressly statedotherwise. Thus, unless expressly stated otherwise, each featuredisclosed is one example only of a generic series of equivalent orsimilar features.

Furthermore, any element in a claim that does not explicitly state“means for” performing a specified function, or “step for” performing aspecific function, is not to be interpreted as a “means” or “step”clause as specified in 35 U.S.C. Section 112, Paragraph 6. Inparticular, the use of “step of” or “act of” in the Claims herein is notintended to invoke the provisions of 35 U.S.C. 112, Paragraph 6.

Please note, if used, the labels left, right, front, back, top, bottom,forward, reverse, clockwise and counter clockwise have been used forconvenience purposes only and are not intended to imply any particularfixed direction. Instead, they are used to reflect relative locationsand/or directions between various portions of an object.

FIG. 1A is a simplified block diagram of a transimpedance amplifierdevice (TIA) according to an embodiment of the present invention. Asshown, device 101 includes a TIA 120 coupled to a photodiode 110. Thephoto diode 110 is coupled to inductors 111 that are coupled to the TIA120 and the photodiode 110 and inductors 111 are shown on the dieinterface 112. The TIA 120 has a first output terminal OUTP 121 and asecond output terminal OUTN 122. In an embodiment, the TIA 120 can beprovided in differential self-biased configuration including one or moredeep n-well NFET devices, which are shown in FIG. 1B. Differential TIA'scan be stacked between multiple supply rails providing a predeterminedbias voltage across the photodiode 110.

FIG. 1B is a simplified diagram illustrating a deep n-well NFET deviceaccording to an embodiment of the present invention. As shown, NFET 102,represented as a transistor symbol, is shown in a cross-sectional view103 providing greater detail. The deep n-well NFET is configured on ap-substrate 140 with a deep n-well region 150 overlying the p-substrate140. A p+ region 142 and one or more p-well regions 141 are configuredwithin one or more portions of the deep n-well region 150.

An advantage of the deep n-well devices 102, which can be provided in a28 nm process, is that these deep n-well devices can be floated to anypositive voltage for various applications, such as telecommunicationsand the like. The device 101, shown in FIG. 1A, implementing these deepn-well devices can include benefits such as having low inductance radiofrequency (RF) return, improved receiver stability, and signalintegrity. These benefits can enable higher Zt designs of communicationsIC chip devices with improved RX sensitivity, or receive sensitivity. Ina specific embodiment, the differential approach offers a 1.5 dB SNRimprovement. Being in a differential configuration also offers commonmode rejection (if such a signal is present) and can also enhancelinearity as differential architectures allow for even order harmonicsuppression. Other benefits will be understood by those of ordinaryskill in the art.

FIG. 2 is a simplified block diagram illustrating a transimpedanceamplifier device according to an embodiment of the present invention. Asshown, the device 200 includes a photodiode 210 coupled to adifferential TIA 220, which is followed by a Level Shifting/DifferentialAmplifier (LS/DA) 230. The differential TIA 220 includes a first TIA 222and a second TIA 221. The first TIA 222 can include a first inputterminal and a first output terminal. Similarly, the second TIA 221 caninclude a second input terminal and a second output terminal. Thephotodiode 210 is coupled between the first input terminal and thesecond input terminal, shown at nodes 211. The LS/DA 230 can be coupledto the first output terminal and the second output terminal.

In an embodiment, the present invention provides a self-biaseddifferential TIA device. The TIA device includes a semiconductorsubstrate comprising a plurality of CMOS cells. These CMOS cells can beconfigured using a 28 nm process technology. Each of the CMOS cells caninclude a deep n-type well region, as described previously in FIG. 1B.The first TIA 222 can be configured using a plurality of first CMOScells, while the second TIA 221 can be configured using a plurality ofsecond CMOS cells such that the second input terminal is operable at anypositive voltage level with respect to an applied voltage to a deepn-well for each of the plurality of second CMOS cells.

Using the deep n-well regions, the differential TIA 220 can beself-biased with customizable bias voltages at the TIA inputs. Anypositive voltage level can be used (2V, 3V, 5V, etc.) as long as thereis 1V across the TIA and there is a differential voltage between theinputs of the first and second TIA of at least 2-5V. The photodiode canbe characterized by a responsivity value ranging from about 0.6 to about0.9 Amps/Watt.

In a specific embodiment, each of the first TIA and the second TIA canbe provided with a supply voltage that is independent of a photodiodedifferential voltage provided on the first input terminal and the secondinput terminal. As shown in FIG. 2, the first TIA 222 includes a VDDLlevel and a VSSL level while the second TIA 221 includes a VDDH leveland a VSSH level. The LS/DA 230 is also shown with a VDDL level and aVSSL level. Due to the self-biased configuration of the TIAs, theseupper and lower supply voltages can be independent of the photodiodebias voltage or the photodiode differential voltage.

In FIG. 2, the VDDH level is about 3V, VSSH is about 2V, VDDL is about1V, and VSSL is at 0V. The input TIA bias is at about between theVDD/VSS rails, which results in a roughly 2V reverse bias over thephotodiode 210. In an embodiment, the high-side TIA (second TIA) currentcan be recycled to low-side TIA. High-side level shifting can beachieved with AC coupling on the high-side (second TIA) and low-side(first TIA) TIAs to the LS/DA to have reduced or minimum skew. The VPD(photodiode) reverse bias range is about 1 to 2V for VDDH in the 2 to 3Vrange. AC coupling to the LS/DA enables the wide bias range. In variousembodiments, the determined bias ranges and values can depend on thetype of application or characteristics of the process technology.

FIG. 3 is a simplified circuit diagram illustrating a fully differentialtransimpedance amplifier device according to an embodiment of thepresent invention. As shown, device 300 includes a photodiode 310coupled to a first TIA 322 and a second TIA 321. The first and secondTIAs are coupled to a LS/DA, which includes modules 331 and 332. Module331 of the LS/DA includes an up-shifting device and a down-shiftingdevice configured to mitigate any mismatch in data bits between thefirst TIA and the second TIA. The LS/DA can include a differentialamplifier having a differential voltage output and can be configuredwith a level shifter, as shown in module 332. A gain amplifier (gainadjust) can also be provided to correct any losses from either theup-shifting device of the down-shifting device. As an example,transistor 333 is marked to be a deep n-well NFET as shown in FIG. 1B.

This embodiment includes the benefits of being able to float the n-wellsat positive voltages allowing for the differential TIAs 321/322 to bestacked between multiple supply rails providing a 2V bias across thephotodiode 310. Furthermore, each of the TIAs 321/322 includes a switchmechanism 340 including Vsw, a switch element, and Rf resistors. Theseswitches provide dual-mode operations in two different bit rates (e.g.10G and 28G, or the like).

In an embodiment, the present invention can provide a transimpedanceamplifier (TIA) device. The device can include a semiconductor circuithaving a plurality of CMOS cells. Each of these CMOS cells can include adeep n-type well region. In a specific embodiment, the plurality of CMOScells is configured using a 28 nm process technology.

The device can also include a first TIA being configured using aplurality of first CMOS cells and second TIA being configured using aplurality of second CMOS cells. The first TIA includes a first inputterminal and a first output terminal, while the second TIA includes asecond input terminal and a second output terminal. The second TIA isconfigured such that the second input terminal is operable at anypositive voltage level with respect to an applied voltage to a deepn-well for each of the plurality of second CMOS cells.

In a specific embodiment, the first TIA includes a VDDL level and a VSSLlevel, while the second TIA includes a VDDH level and a VSSH level. Eachof the TIAs can be provided with a supply voltage independent of aphotodiode differential voltage that is provided on the first and secondinput terminals. Also, each of the first and second TIAs can include afirst switch device configured for at least two bit rates.

The device can include a photodiode coupled between the first and secondinput terminals. In a specific embodiment, the photodiode ischaracterized by a responsivity value ranging from about 0.6 to about0.9 Amps/Watt.

Furthermore, the device can include a LS/DA coupled to the first andsecond output terminals. In a specific embodiment, the LS/DA can includean up-shifting device and a down-shifting device configured to mitigateany mismatch in databits between the first and second TIA. The LS/DAincludes differential amplifier having a differential voltage output.

In an embodiment, the device can further include a gain amplifierconfigured to correct any losses provided by either the up-shiftingdevice or the downshifting device. The LS/DA can also be configured witha level shifter.

In an embodiment, the device can further include an AC source coupled toa first capacitor and configured to the first output terminal. The ACsource is also coupled to a second capacitor and configured to thesecond output terminal.

In an embodiment, the device can further include a clock data recoverymodule coupled to each of the first and second TIA. This clock datarecovery module can be configured with the plurality of CMOS cells. Thedevice can also include a digital signal processor module coupled toeach of the first and second TIAs.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. Therefore, the above description and illustrations should not betaken as limiting the scope of the present invention which is defined bythe appended claims.

FIG. 4 is a simplified circuit diagram illustrating a fully differentialAC-coupled transimpedance amplifier device according to an embodiment ofthe present invention. As shown, device 400 includes a photodiode 410coupled to a first TIA 422 and a second TIA 421. The first and secondTIAs are coupled to a LS/DA, which includes modules 441, 442, and 432.Each of the TIAs 421/422 includes a switch mechanism 440 including Vsw,a switch element, and Rf resistors. These switches provide dual-modeoperations in two different bit rates (e.g. 10G and 28G).

The first and second TIAs 421/422 can be AC-coupled with an AC sourcecoupled to a first capacitor and a second capacitor and being configuredto the first TIA output and second TIA output, respectively. In aspecific embodiment, the first and second capacitor can include aMetal-Insulator-Metal (MIM) capacitors, as shown in item 450. As anexample, the MIM cap can have a 3.0 pF capacitance and have a 30×40micron dimension. The AC-coupled TIA has the benefit of not sufferingfrom Level shifter loss and is better suited to interface withphotodiodes requiring greater than 1V biases. Modules 441 and 442 forman Input Common Mode Feedback (ICMFB) module that is coupled to thefirst and second capacitors and to a gain cell module 432. Variousembodiments may include large coupling capacitors and/or large inputcommon mode feedback resistors.

The present invention also provides a system configured on a singleintegrated circuit (IC) chip device. The system can include asemiconductor substrate including a plurality of CMOS cells. Each ofthese CMOS cells includes a deep n-type well region. The system includesa TIA module, which includes a first TIA and a second TIA. The first TIAincludes a first input terminal and a first output terminal. The firstTIA is configured using a plurality of first CMOS cells. The second TIAincludes a second input terminal and a second output terminal. Thesecond TIA configured using a plurality of second CMOS cells such thatthe second intput terminal is operable at any positive voltage levelwith respect to an applied voltage to a deep n-well for each of theplurality of second CMOS cells.

In an embodiment, the system includes a photodiode coupled between thefirst input terminal and the second input terminal. The photodiode isconfigured as a discrete device and separate from the first and secondTIAs. The system includes an LS/DA coupled to the first and secondoutput terminals. In a specific embodiment, the first and second inputterminals are provided with a differential voltage ranging from about 1Vto about 5V. Also, the system includes a Clock and Data Recovery (CDR)module coupled to the TIA module, and configured with a plurality ofCMOS cells. Of course, there can be other variations, modifications, andalternatives.

FIG. 5 is a simplified table describing characteristics oftransimpedance amplifier devices according to various embodiments of thepresent invention. Table 500 lists example results of a simulatedcomparison between a 28 nm CMOS TIA, 45 nm CMOS TIA, and a 130 nmBi-CMOS TIA. The 28 nm CMOS TIA, according to an embodiment of thepresent invention, is shown to have comparable performance to the 130 nmBi-CMOS TIA. TIA designs using the 28 nm process provided the best gainand noise characteristics with some power drawbacks. By comparison, the45 nm TIA designs suffered from poor gain and bandwidth due to lowintrinsic gain requiring an additional gain stage. Furthermore, in theseexamples, the CMOS TIA designs have 10G/28G capabilities implementedusing switches.

FIGS. 6A and 6B are simplified graphs illustrating a simulation of a 28nm CMOS TIA according to an embodiment of the present invention. Graph601 shows a voltage over time simulation with I_(in,pp)=100 microAmpsand graph 602 shows a voltage over time simulation with I_(in,pp)=1milliAmp. FIGS. 6C and 6D are simplified graphs illustrating simulationof a 45 nm CMOS TIA according to an embodiment of the present invention.Similar to FIGS. 6A and 6B, graph 603 shows a simulation graph withI_(in,pp)=100 microAmps, and graph 604 shows a simulation withI_(in,pp)=1 milliAmp.

FIG. 6E is a simplified graph illustrating a simulation comparing a 28nm CMOS TIA and a 45 nm CMOS TIA according to various embodiments of thepresent invention. This graph 605 shows the simulated differentialV_(out,pp) versus I_(in,pp) at 28 Gbps. The higher data deterministicjitter (DDJ) in the 45 nm CMOS TIA is due to poor phase linearity, whichis measured with group delay (GD) variation. In order to get highertotal bandwidth, the TIA (1^(st) stage) gain is reduced, which resultsin peaking (less pole splitting) causing higher GD variation (seen atlower swings). The 28 nm CMOS TIA is shown to give better linearity andhigher voltage swing compared to the 45 nm CMOS TIA for similartrans-impedance gain (˜1.0 kiloOhms) and bandwidth (˜17.5 G).

FIG. 7 is a simplified block diagram illustrating a power supplyregulator according to an embodiment of the present invention. Device700 is a multi-level power supply regulator module including a pair ofpush-pull linear regulators 710 and 720. Using a DC-DC down conversionthrough a charge recycling scheme to support multiple supply domains cansave power. For example, the push-pull linear regulators 710, 720 can bestacked to regulate 2V and 1V internal voltages from a 3V reference. Bydelivering power in a 3V system at 3× the nominal voltage (i.e. 1.0 V),the load current is reduced by 3×. Device 700 can be implemented invarious embodiments of the fully differential self-biased TIA devices asdescribed previously.

FIG. 8 is a simplified block diagram illustrating a transimpedanceamplifier device according to an embodiment of the present invention. Asshown, the device 800 includes a photodiode 810 coupled to adifferential TIA, which is followed by a Limiting Amplifier (LA) 830.The differential TIA includes a first TIA 822 and a second TIA 821. Thefirst TIA 822 can include a first input terminal and a first outputterminal. Similarly, the second TIA 821 can include a second inputterminal and a second output terminal. The photodiode 810 is coupledbetween the first input terminal and the second input terminal. The LA830 can be coupled to the first output terminal and the second outputterminal. The LA 830 is followed by a CDR circuit 840, which sends datato a de-serializer module 850 and to a buffer 860. The CDR circuit 840,de-serializer 850, and the buffer 860 are coupled to a recovered clock.In an embodiment, the de-serializer 850 includes N-bit De-multiplexersfrom high speed (×1) to lower speed (×1/N) types.

FIG. 9 is a simplified block diagram illustrating a transimpedanceamplifier device according to an embodiment of the present invention. Asshown, the device 900 includes a photodiode 910 coupled to adifferential TIA, which is followed by a Variable Gain Amplifier (VGA)830. The differential TIA includes a first TIA 922 and a second TIA 921.The first TIA 922 can include a first input terminal and a first outputterminal. Similarly, the second TIA 921 can include a second inputterminal and a second output terminal. The photodiode 910 is coupledbetween the first input terminal and the second input terminal. The VGA930 can be coupled to the first output terminal and the second outputterminal. The VGA 930 is followed by a Track and Hold (THA) modulecoupled to an Analog to Digital Converter (ADC) module. The THA/ADCmodule is also coupled to a Digital Signal Processor (DSP), which can beconfigured with the plurality of CMOS cells to perform various functionssuch as channel estimation and compensation, frequency/phase alignment,and symbol synchronization.

In an embodiment, the present invention provides a system configured ona single IC chip device. The system can be provided on a semiconductorsubstrate having a plurality of CMOS cells, each of which having a deepn-type well region. The system can include a differential TIA thatincludes a photodiode coupled to a differential TIA, which is followedby a Level Shifting/Differential Amplifier (LS/DA). The differential TIAincludes a first TIA and a second TIA. The first TIA can include a firstinput terminal and a first output terminal. Similarly, the second TIAcan include a second input terminal and a second output terminal. Thephotodiode is coupled between the first input terminal and the secondinput terminal, shown at nodes. In a specific embodiment, the photodiodeis a discrete device that is separate from the TIA device. The LS/DA canbe coupled to the first output terminal and the second output terminal.

In an embodiment, the present invention provides a self-biaseddifferential TIA device. The TIA device includes a semiconductorsubstrate comprising a plurality of CMOS cells. These CMOS cells can beconfigured using a 28 nm process technology. Each of the CMOS cells caninclude a deep n-type well region, as described previously in FIG. 1B.The first TIA can be configured using a plurality of first CMOS cells,while the second TIA can be configured using a plurality of second CMOScells such that the second input terminal is operable at any positivevoltage level with respect to an applied voltage to a deep n-well foreach of the plurality of second CMOS cells. In a specific embodiment,the differential voltage provided across the first and second inputterminals ranges from about 1 volt to about 5 volts.

Using the deep n-well regions, the differential TIA can be self-biasedwith customizable bias voltages at the TIA inputs. Any positive voltagelevel can be used (2V, 3V, 5V, etc.) as long as there is 1V across theTIA and there is a differential voltage between the inputs of the firstand second TIA of at least 2-5V. The photodiode can be characterized bya responsivity value ranging from about 0.6 to about 0.9 Amps/Watt.

In a specific embodiment, each of the first TIA and the second TIA canbe provided with a supply voltage that is independent of a photodiodedifferential voltage provided on the first input terminal and the secondinput terminal. The first TIA includes a VDDL level and a VSSL levelwhile the second TIA includes a VDDH level and a VSSH level. The LS/DAis also shown with a VDDL level and a VSSL level. Due to the self-biasedconfiguration of the TIAs, these upper and lower supply voltages can beindependent of the photodiode bias voltage or the photodiodedifferential voltage. Specific configurations of this system can besimilar to the embodiments depicted in FIGS. 3 and 4.

In an embodiment, the present invention provides a self-biased fullydifferential TIA designed in a 1V deep submicron. As CMOS technologyscales, operating supply voltages are self-biased. An automatic clockphase adjustment architecture for synchronization of multiple high-speedis also provided.

Future 1 THz and 400 GHz Optical Fiber Links will have multiple channelswith 28G and 10G Optical Receivers (Rx) on a single silicon chipimplemented in a high-speed deep-submicron CMOS technology. As CMOStechnology is scaled down to make circuits and systems run at higherspeed and occupy smaller chip (die) area, the operating supply voltageis reduced for lower power. Conventional FET transistors indeep-submicron CMOS processes have very low breakdown voltage, as aresult the operating supply voltage is maintained around 1 Volt. ThePhoto-detectors (PD) used in 28G and 10G Optical Receivers require abias voltage of more than 2 Volts across the anode and cathode nodes ofthe PD for better photo-current responsivity.

Typically, in existing high speed TIA's the PD is AC-coupled to thetrans-impedance amplifier (TIA) and/or external voltage is used to biasthe PD. AC-coupling between PD and TIA reduces the system sensitivity.Moreover, with multiple channels (over 50 channels in conventionalembodiments) the external bias circuits add to the system complexity andincreases the module cost. Embodiments of the present inventioneliminate the need of external bias circuits and all bias voltages tothe PD will be internally generated by the CMOS TIA. Additionally, thearchitecture described here AC-couples the PD to the TIA reducing noiseand improving sensitivity.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. Therefore, the above description and illustrations should not betaken as limiting the scope of the present invention which is defined bythe appended claims.

What is claimed is:
 1. A communication system comprising: atransimpedance amplifier (TIA) device comprising: a semiconductorsubstrate comprising a plurality of CMOS cells, each of the CMOS cellscomprising a deep n-type well region; a first TIA comprising a firstinput terminal and a first output terminal, the first TIA configuredusing a plurality of first CMOS cells; a second TIA comprising a secondinput terminal and a second output terminal, the second TIA configuredusing a plurality of second CMOS cells such that the second inputterminal is operable at any positive voltage level with respect to anapplied voltage to a deep n-well for each of the plurality of secondCMOS cells; a photodiode coupled between the first input terminal andthe second input terminal; and a Level Shifting/Differential Amplifier(LS/DA) coupled to the first output terminal and the second outputterminal; and an optical link coupled to the TIA device.
 2. The systemof claim 1 wherein the photodiode is characterized by a responsivityvalue ranging from about 0.6 to about 0.9 Amps/Watt.
 3. The system ofclaim 1 wherein the first TIA comprises a VDDL level and a VSSL level;and wherein the second TIA comprises a VDDH level and a VSSH level. 4.The system of claim 1 wherein the plurality of CMOS cells is configuredusing a 28 nm process technology.
 5. The system of claim 1 wherein eachof the first TIA and the second TIA is provided with a supply voltageindependent of a photodiode differential voltage provided on the firstinput terminal and the second input terminal.
 6. The system of claim 1wherein each of the first TIA and the second TIA includes a first switchdevice configured for at least two bit rates.
 7. The system of claim 1wherein the LS/DA comprises an up-shifting device and a down-shiftingdevice configured to mitigate any mismatch in data bits between thefirst TIA and the second TIA; wherein the LS/DA comprises a differentialamplifier having a differential voltage output.
 8. The system of claim 1wherein the LS/DA comprises an up-shifting device and a down-shiftingdevice configured to mitigate any mismatch in data bits between thefirst TIA and the second TIA; and further comprising a gain amplifierconfigured to correct any losses provided by either the up-shiftingdevice or the down-shifting device; wherein the LS/DA comprises adifferential amplifier having a differential voltage output.
 9. Thesystem of claim 8 further comprising a level shifter configured with theLS/DA.
 10. The system of claim 1 further comprising an AC source coupledto a first capacitor and configured to the first output terminal; andthe AC source coupled to a second capacitor and configured to the secondoutputer terminal.
 11. The system of claim 1 further comprising a clockdata recovery module coupled to each of the first TIA and the secondTIA, the clock data recovery module configured with the plurality ofCMOS cells.
 12. The system of claim 1 further comprising a digitalsignal processor module coupled to each of the first TIA and the secondTIA.
 13. A system, the system comprising: a semiconductor substratecomprising a plurality of CMOS cells, each of the CMOS cells comprisinga deep n-type well region; a transimpedance amplifier (TIA) modulecomprising: a first TIA comprising a first input terminal and a firstoutput terminal, the first TIA configured using a plurality of firstCMOS cells; a second TIA comprising a second input terminal and a secondoutput terminal, the second TIA configured using a plurality of secondCMOS cells such that the second input terminal is operable at anypositive voltage level with respect to an applied voltage to a deepn-well for each of the plurality of second CMOS cells; a photodiodecoupled between the first input terminal and the second input terminal,the photodiode being a discrete device and separate from the first andsecond TIAs; a Level Shifting/Differential Amplifier (LS/DA) coupled tothe first output terminal and the second output terminal; and whereuponthe first input terminal and the second input terminal are provided witha differential voltage ranging from about 1V to about 5V; a Clock andData Recovery (CDR) module coupled to the TIA module, and configuredwith a plurality of CMOS cells; and a communication link.
 14. The systemof claim 13 wherein the photodiode is characterized by a responsivityvalue ranging from about 0.6 to about 0.9 Amps/Watt.
 15. The system ofclaim 13 wherein the first TIA comprises a VDDH level and a VSSH level;and wherein the second TIA comprises a VDDL level and a VSSL level. 16.The system of claim 13 wherein the plurality of CMOS cells is configuredusing a 28 nm process technology.
 17. The system of claim 13 whereineach of the first TIA and the second TIA is provided with a supplyvoltage independent of a photodiode differential voltage provided on thefirst input terminal and the second input terminal.
 18. The system ofclaim 13 wherein each of the first TIA and the second TIA includes afirst switch device configured for at least two bit rates.
 19. Thesystem of claim 13 wherein the LS/DA comprises an up-shifting device anda down-shifting device configured to mitigate any mismatch in data bitsbetween the first TIA and the second TIA; wherein the LS/DA comprises adifferential amplifier having a differential voltage output.
 20. Thesystem of claim 13 wherein the LS/DA comprises an up-shifting device anda down-shifting device configured to mitigate any mismatch in data bitsbetween the first TIA and the second TIA; and further comprising a gainamplifier configured to correct any losses provided by either theup-shifting device or the down-shifting device; wherein the LS/DAcomprises a differential amplifier having a differential voltage output.21. The system of claim 20 further comprising a level shifter configuredwith the LS/DA.
 22. The system of claim 13 further comprising an ACsource coupled to a first capacitor and configured to the first outputterminal; and the AC source coupled to a second capacitor and configuredto the second output terminal.
 23. The system of claim 13 furthercomprising a digital signal processor module coupled to each of thefirst TIA and second TIA, and configured with a plurality of CMOS cells.